features trenchfet power mosfet applications load switch battery switch si6913dq vishay siliconix new product document number: 72368 s-31914?rev. a, 15-sep-03 www.vishay.com 1 dual p-channel 12-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.021 @ v gs = -4.5 v -5.8 -12 0.028 @ v gs = -2.5 v -5.0 0.037 @ v gs = -1.8 v -4.4 d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet ordering information: SI6913DQ-T1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -12 v gate-source v oltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d -5.8 -4.9 continuous drain current (t j = 150 c) a t a = 70 c i d -4.6 -3.9 a pulsed drain current (10 s pulse width) i dm -30 a continuous source current (diode conduction) a i s -1.0 -0.7 maximum power dissipation a t a = 25 c p d 1.14 0.83 w maximum power dissipation a t a = 70 c p d 0.73 0.53 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 86 110 maximum junction-to-ambient a steady state r thja 124 150 c/w maximum junction-to-foot (drain) steady state r thjf 52 65 c/w notes a. surface mounted on 1? x 1? fr4 board.
si6913dq vishay siliconix new product www.vishay.com 2 document number: 72368 s-31914?rev. a, 15-sep-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 400 a -0.40 -0.9 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = -12 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = -12 v, v gs = 0 v, t j = 70 c -25 a on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -20 a v gs = -4.5 v, i d = -5.8 a 0.016 0.021 drain-source on-state resistance a r ds(on) v gs = -2.5 v, i d = -5.0 a 0.021 0.028 ds(on) v gs = -1.8 v, i d = -4.4 a 0.029 0.037 forward transconductance a g fs v ds = -5 v, i d = -5.8 a 25 s diode forward voltage a v sd i s = -1.0 a, v gs = 0 v -0.61 -1.1 v dynamic b total gate charge q g 18.5 28 gate-source charge q gs v ds = -6 v, v gs = -4.5 v, i d = -5.8 a 2.7 nc gate-drain charge q gd 5.0 gate resistance r g f = 1.0 mhz 4.6 turn-on delay time t d(on) 45 70 rise time t r v dd = -6 v, r l = 6 80 120 turn-off delay time t d(off) v dd = -6 v , r l = 6 i d -1 a, v gen = -4.5 v, r g = 6 130 200 ns fall time t f 80 120 source-drain reverse recovery time t rr i f = -1.0 a, di/dt = 100 a/ s 65 100 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 t c = -55 c 125 c 25 c transfer characteristics v gs - gate-to-source voltage (v) - drain current (a) i d 0 6 12 18 24 30 012345 v gs = 5 thru 2.5 v output characteristics v ds - drain-to-source voltage (v) - drain current (a) i d 2 v 1.5 v
si6913dq vishay siliconix new product document number: 72368 s-31914?rev. a, 15-sep-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 500 1000 1500 2000 2500 3000 3500 024681012 - on-resistance ( r ds(on) ) 0.60 0.80 1.00 1.20 1.40 1.60 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0 5 10 15 20 25 30 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 v ds - drain-to-source voltage (v) c rss v ds = 6 v i d = 5.8 a i d - drain current (a) v gs = 4.5 v i d = 5.8 a gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.3 0.6 0.9 1.2 1.5 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 012345678 t j = 25 c i d = 5.8 a 30 10 0.1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 4.5 v t j = 150 c v gs = 2.5 v v gs = 1.8 v c oss c iss 1
si6913dq vishay siliconix new product www.vishay.com 4 document number: 72368 s-31914?rev. a, 15-sep-03 typical characteristics (25 c unless noted) 0 40 80 20 power (w) single pulse power, junction-to-ambient time (sec) 60 10 -3 10 -2 1 10 600 10 -1 10 -4 100 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 i d = 400 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 124 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.1 10 1 0.01 0.001 100 safe operating area, junction-to-case v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 1 ms - drain current (a) i d 0.1 limited by r ds(on) t c = 25 c single pulse 10 ms 100 ms dc 1 s 10 s
si6913dq vishay siliconix new product document number: 72368 s-31914?rev. a, 15-sep-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effe ctive transient thermal impedance
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